Low-Noise RF Transistor Suits Mobile Power Amps

April 1, 2000
Originally developed by Motorola, the MRF5812 is a low-noise, low-power RF transistor used in the input stage of power amplifiers for two-way mobile radios. The device features a collector current of 200 mA and a gain of 15.5 dB at 500 MHz.

Originally developed by Motorola, the MRF5812 is a low-noise, low-power RF transistor used in the input stage of power amplifiers for two-way mobile radios. The device features a collector current of 200 mA and a gain of 15.5 dB at 500 MHz.

Company: MICROSEMI CORP.

Product URL: Click here for more information

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