Laser Diode Performs At 1,400 nm To 2,000 nm

Oct. 8, 2008
Targeting medical markets, the company’s latest generation of 1,400 nm to 2,000 nm semiconductor laser diodes rely on indium phosphide (InP) to provide both higher power and better efficiency. These wavelengths open up a wide range of surgical

Targeting medical markets, the company’s latest generation of 1,400 nm to 2,000 nm semiconductor laser diodes rely on indium phosphide (InP) to provide both higher power and better efficiency. These wavelengths open up a wide range of surgical and aesthetic medical applications through either direct use or to pump holmium or erbium lasers. At 1.9 microns, the Pearl fiber-coupled module delivers up to 20W of output power from a single 400-micron 0.22 NA fiber with greater than 10% wall-plug efficiency. Single emitter chips produce up to 1.5W on expansion-matched substrates. At 1.4 and 1.5 microns, the module provides up to 40W from a single 400-micron 0.22NA fiber and more than 30% wall-plug efficiency. Single emitter chips produce up to 3.5W on expansion matched substrates. For more details, call NLIGHT CORP., Vancouver, WA. (360) 566-4460.

Company: NLIGHT CORP.

Product URL: Click here for more information

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