Designers of microwave power amplifiers and low-noise amplifiers have a new weapon: the ATF-501P8 enhancement-mode pseudomorphic high-electron-mobility field-effect transistor (E-pHEMT FET).
The device was designed for applications like cellular/PCS/WCDMA basestations, low-earth-orbit satellite systems, terrestrial multichannel multipoint distribution systems, wireless local-area networks, wireless local loop, fixed wireless access, and other services operating from 50 MHz to 6 GHz. One of the only E-pHEMT FETs available for single-voltage operation, it's a logical choice to replace single-voltage heterojunction bipolar transistors (HBTs) as well as dual-voltage conventional depletion-mode pHEMT and gallium-arsenide heterostructure FETs.
In transmitter applications, the ATF-501P8 provides +29-dBm linear output power with 65% power-added efficiency. Thanks to a low thermal resistance of 23°C/W, it dissipates nearly 2 W at 85°C ambient while maintaining a chip temperature that ensures high reliability. The third-order intercept point (IP3) is +45 dBm, permitting a more efficient multichannel amplifier that can handle more voice and data channels. In receiver applications, the device provides 15-dB gain with a low 1.0-dB noise figure at 2 GHz.
The ATF-501P8 comes in a 2- by 2- by 0.75-mm leadless plastic chip carrier (LPCC) package. Typical operating voltage is 4.5 V. Pricing is $3.13 in quantities of 5000 to 10,000.
Agilent Technologieswww.agilent.com/view/rf