MMICs Reap Benefits Of GaAs HBT Process Technology

A series of microwave ICs has been produced in InGaP-emitter, GaAs heterojunction bipolar transistor (HBT) technology. Benefits of the process technology include the potential for high gain per stage, operation from a single-voltage supply, low phase noise, high linearity, and excellent uniformity and repeatability.The HMMC-3002, -3004 and -3008 are 200 MHz to 16 GHz, divide-by-two, divide-by-four and divide-by-eight prescalers, respectively. They offer very low phase noise of -153 dBc/Hz at 100-kHz offset and operate from a single positive or negative supply of 4.5V to 6.5 V. The HMMC-3022, -3024 and -3028 are 12-GHz prescalers said to operate at about half the current of the firm's HMMC-300x Series devices. Output power level is selectable at 0 dBm or -6 dBm. Also available is a pair of HBT amplifiers.