Designed for operation in TDMA systems such as cordless DECT telephone applications, the SiGe front end IC U7004B is claimed as the industry's first DECT RF device produced in SiGe technology. The chip is said to replace the usual GaAs power amplifier devices normally used in DECT applications with a SiGe integrated solution. The new front-end IC provides lower noise, higher switching speeds and lower power consumption. The device features a high level of integration level- the chip contains a low-noise amplifier, power amplifier and transmit/receive switch driver- to save the cost of additional, external components. Current consumption is 350 mA with typical noise figure rated at less than 2 dB. The U7004B, part of a complete RD chipset, is available in SSO20 packages.
Company: TEMIC SEMICONDUCTORS
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