New RF Bipolar Transistors Enter High Gain, Low Noise Portable Products Mart

Fabricated using a discrete silicon process with ion-implanted gold metallization and nitride passivation, MRF1047, MRF1057 and MRF1027 sub-micron versions of the MRF941 transistor family have a minimum noise figure of 1 dB at 3V, frequency of 1 GHz, and current of 1, 3 and 5 mA, respectively. Maximum collector currents are 25, 45 and 70 mA, respectively. The bipolar devices are well-suited for high gain, low noise applications such as VCOs, low noise amplifiers and mixers in products such as pagers, cell phones, and other wireless products.