Electronicdesign 6578 13 11 06ti Femtofet
Electronicdesign 6578 13 11 06ti Femtofet
Electronicdesign 6578 13 11 06ti Femtofet
Electronicdesign 6578 13 11 06ti Femtofet
Electronicdesign 6578 13 11 06ti Femtofet

Ultra-Small MOSFET Transistors Feature Low On-Resistance

Nov. 6, 2013
N-channel and P-channel FemtoFET MOSFET transistors feature ultra-small packaging and low on-resistance for space-constrained handheld applications.

Three N-channel and three P-channel FemtoFET MOSFETS from TI boast being the industry’s smallest, low on-resistance MOSFETS for space-constrained handheld applications, such as smartphones and tablets. The CSD17381F4 and CSD25481F4 FemtoFET MOSFET transistors feature ultra-small packaging and on-resistance below 100 mΩ, providing power savings and longer battery life. All FemtoFET MOSFETS provide ESD protection greater than 4,000 V human body model, and continuous drain current values ranging from 1.5 A to 3.1 A provide more than double the performance compared to similar size devices on the market today. Measuring 0.6 x 1.0 x 0.35 mm, the FemtoFET LGA packages are 40% smaller than standard chip scale packaging. The FemtoFET MOSFET transistors join TI’s portfolio of NexFET power MOSFETS that includes the CSD25213W10 P-channel and CSD13303W1015 N-channel devices for portable applications. Available in volume now, the FemtoFET MOSFETs range in price from $0.06 each/1,000 for the CSD17483F4, to $0.10 each/1,000 for the CSD17381F4.

TEXAS INSTRUMENTS INC.

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!