High-Temperature Power-MOSFET Driver Withstands 225°C

Sept. 25, 2009
$jq().ready( function() \{ setupSidebarImageList(); \} );

Featuring reliable operation from -55°C up to +225°C, the Hyperion high-side and low-side driver is suitable for driving MOSFETs in DC-DC converters and for half-bridge driver designs in electric motor control applications and power inverters. With a typical on-resistance of 1 ?, both high-side and low-side types can drive up to 1-nF loads with a 40-ns propagation delay and 15-ns transition time at 200°C. Internal, adaptive non-overlap circuitry further reduces switching losses by preventing simultaneous conduction when used in MOSFET drive applications. The high-side floating driver is bootstrapped and can accommodate voltages as high as 35 V on the bootstrap node. An under-voltage lockout function holds the high-side switch off until the driver has sufficient voltage for proper operation. A crowbar input turns on the low-side driver independently of the input signal state, and a low-side disable pin allows operation in non-synchronous mode. A shut-down pin turns off both the high-side and the low-side drivers. The Hyperion power-MOSFET driver is available now for sampling and evaluation in a ceramic DIL28 package. Pricing starts at $250.53 each for up to 200 units. CISSOID, Mont-Saint-Guibert, Belgium. +32 10 48 92 10.

Company: CISSOID

Product URL: Click here for more information

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!