Power MOSFETs Bring Low Gate Charge To DC-To-DC Converter Applications

Built using the firm's proprietary Power MOS VI technology, the APT5010LLC in TO-264 and APT5010B2LC in T-MAX packages offer a breakdown voltage of 500V and on-resistance of 10 milliohms with rated continuous drain current of 47A. The input capacitance is 5120 pF and gate charge is 145 nC. A thermal resistance of 0.24°C/W provides a power dissipation of 520W. These characteristics and a tested avalanche rating of 250 mJ produces an extremely robust power MOSFET. Applications are dc-to-dc converters, power factor correction pre-regulators, switched-mode power supplies, welders, UPSs, motor controls and inverters.