Development Board for Enhancement Mode Gallium Nitride (eGaN®) FETs

Efficient Power Conversion Corporation (EPC) introduces the EPC9005 development board to make it easier for users to start designing with a 40 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9005 development board is a 40 V maximum device voltage, 7 A maximum output current, half bridge with on board gate drives, featuring the EPC2014 40 V eGaN FET. The purpose of this development board is to simplify the evaluation process of the EPC2014 eGaN FET by including all the critical components on a single board that can be easily connected into an existing converter.

The EPC9005 development board is 2" x 1.5" and contains not only two EPC2014 GaN FETs in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

Efficient Power Conversion (EPC)
Part Number: EPC2014