This non-isolated high- and low-side gate driver with floating regulators and integrated level shifting was specifically developed to reliably drive enhanced-mode GaN devices....
eGaN FETs and ICs developed by EPC provide the short pulse widths needed for higher-resolution LiDAR that enable autonomy as well as other vision-based systems.
A spin-out of Cambridge University, Cambridge GaN Devices is a fabless semiconductor company that develops a range of energy-efficient enhancement-mode GaN-based power devices...
It is not breaking news to tell anyone in the power device or power electronics industry that minimizing parasitics in a design, especially inductance, is better for the overall...
Transphorm has introduced the TPH3207WS GaN field effect transistor (FET) with the lowest on-resistance (41 mW) in a TO-247 package that reduces system volume as much as 50% without...
Efficient Power Conversion has introduced the EPC9066, EPC9067, and EPC9068 development boards, which are configurable to a buck converter or as a ZVS class-D amplifier.