Semiconductors

This non-isolated high- and low-side gate driver with floating regulators and integrated level shifting was specifically developed to reliably drive enhanced-mode GaN devices....

eGaN FETs and ICs developed by EPC provide the short pulse widths needed for higher-resolution LiDAR that enable autonomy as well as other vision-based systems.

A spin-out of Cambridge University, Cambridge GaN Devices is a fabless semiconductor company that develops a range of energy-efficient enhancement-mode GaN-based power devices...

The high-voltage superjunction STPOWER MDmesh M9 series claims the best maximum on-resistance x gate charge figure of merit on the market, as well as an approximately 30% reduction...