This series of high-speed GaNFast and GeneSiC application solutions from Navitas leverages the company's new GaNSense half-bridge IC family and SiC MOSFETs that can handle up to 6.5 kV.
A series of high-speed GaNFast and GeneSiC application solutions developed by Navitas Semiconductor integrates the company's new GaNSense half-bridge IC family and SiC MOSFETs, which can handle up to 6.5 kV with trench-assisted planar technology and a monolithically integrated Schottky diode.
With applications from 20 W to 20 MW, the showcase includes solutions like Navitas' latest 400-W motor-drive solution using GaNSense half-bridge ICs, offering an extremely compact solution. In addition, there's the 2.7-kW CRPS using GaNFast ICs that achieves a titanium level of efficiency, along with GeneSiC MOSFETs with 30% energy savings, 25°C cooler operation, and 3X longer life.
An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the US military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications in the embedded electronic engineering space. Alix currently lives in Wiesbaden, Germany.
Also check out his YouTube watch-collecting channel, Talking Timepieces.
