Second Generation eGaN FET Family Rated at 40 V, 16 m

Oct. 11, 2011
Efficient Power Conversion Corp. introduces the EPC2014 as the newest member of its second-generation enhanced performance eGaN FET family.

Efficient Power Conversion Corporation introduces the EPC2014 as the newest member of its second-generation enhanced performance eGaN FET family. The EPC2014 is environmentally friendly, lead free, RoHS-compliant, and halogen free.

The EPC2014 FET is a 1.87 mm©÷, 40 VDS, 10 A device with a maximum RDS(ON) of 16 m§Ù with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1014 eGaN device. The EPC2014 has an increase in maximum junction temperature rating to 150 ¡ÆC and is fully enhanced at a lower gate voltage than the predecessor EPC1014.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2014 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

In 1k piece quantities, the EPC2014 is priced at $1.12 and is immediately available through Digi-Key Corporation.

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