MOSFET Exploits Ribbon Technology

GENEVA, SWITZERLAND—A power MOSFET developed by STMicroelectronics takes advantage of the company’s ribbon-bonding technology. This delivers a low typical RDS(on) of 800 micro-ohms, which ST claims is a new industry bench¬mark for high-current MOSFETs.

The STV300NH02L, a 20V device, is suited to reducing secondary rectification losses in high-efficiency dc-dc converters. It provides good protection under short-circuit conditions, with a low turn-off time.