Flash Integrates Management Functions

March 4, 2004
To simplify system designs and improve product performance, the HN29V256A series 256-Mb superAND flash memory devices integrate four on-chip memory management functions, eliminating the need for external circuits. A bad-sector management function

To simplify system designs and improve product performance, the HN29V256A series 256-Mb superAND flash memory devices integrate four on-chip memory management functions, eliminating the need for external circuits. A bad-sector management function promises reliable operation throughout the chip's lifetime, regardless of whether a defect is present when the device is shipped or occurs after shipment. The wear-leveling function makes effective use of flash memory rewrite areas and extends the life of the device. An error-correction function improves data reliability and decreases the workload on the system side, while a power-on auto-read (boot) function allows data to be read from an expanded 8 KB area without a command or address input. The series consists of two devices: HN29V256A0B that supports a 16-bit bus width and HN29V256A1B supporting an 8-bit bus width. Both come in a 10 mm x 11.5 mm x 1.2 mm CSP and are priced at $11 each/10K. For more information, call Akiko Ishiyama at RENESAS TECHNOLOGY AMERICA INC., San Jose, CA. (408) 382-7407.

Company: RENESAS TECHNOLOGY AMERICA INC.

Product URL: Click here for more information

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!