512-Mbit NAND Flash Leverages Dual-Die Packaging

Sept. 1, 1999
By packaging two single-level, 256-Mbyte NAND flash EEPROM die in TSOPs and SmartMedia cards, the company has achieved 512-Mbyte NAND flash densities. The 256-Mbyte NAND die on which these products are based uses 0.25-µm process technology and a

By packaging two single-level, 256-Mbyte NAND flash EEPROM die in TSOPs and SmartMedia cards, the company has achieved 512-Mbyte NAND flash densities. The 256-Mbyte NAND die on which these products are based uses 0.25-µm process technology and a shallow trench isolation cell, enabling greater storage capacity within a smaller area without sacrificing chip performance.The TC58512FT comes in TSOP Type I packaging, while the TC58512DC incorporates the firm’s SmartMedia packaging, providing 64 Mbytes of removable storage. Identical page and block specifications are used, making the SmartMedia devices fully backward-compatible with existing products. Both operate from a 3.3V supply.

Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC. (TAEC)

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