CMOS SDRAMs Target High-Bandwidth Apps

May 20, 2011
The AS4Cxxxxx line of high-speed CMOS synchronous DRAMs offer densities of 64 Mb (AS4C4M16S), 128 Mb (AS4C8M16S), and 256 Mb (AS4C16M16S) and are optimized for industrial, communications, medical, and consumer products requiring high memory bandwidth.

The AS4Cxxxxx line of high-speed CMOS synchronous DRAMs offer densities of 64 Mb (AS4C4M16S), 128 Mb (AS4C8M16S), and 256 Mb (AS4C16M16S) and are optimized for industrial, communications, medical, and consumer products requiring high memory bandwidth. Configured as four banks of 1M, 2M, or 4M word x 16 bits with a synchronous interface, the SDRs operate from a single +3.3V ± 0.3V supply. Available in 54-pin, 400-mil plastic TSOP IIs, the devices offer access times from clock down to 4.5 ns at a 5-ns clock cycle and clock rates from 143 MHz to 200 MHz. Pricing ranges from $0.90 to $1.80 each/1,000. Alliance Memory Inc., San Carlos, CA. (650) 610-6800.

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