SPI FRAM Reaches 0.18µm Level

July 18, 2011

Fujitsu's new SPI FRAMs, The new MB85RSxxx family, marks the completion of the company's migration to 0.18µm

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Fujitsu

Langen, Germany: Fujitsu finalised its migration from 0.35 to 0.18µm with the launch of a 0.18µm-based Serial Peripheral Interface ferroelectric RAM (SPI FRAM). FRAM combines the advantages of fast writing SRAM with nonvolatile flash into one device.

The new MB85RSxxx SPI FRAM family comprises the MB85RS256A, MB85RS128A, and MB85RS64A. They feature density levels of 256kb, 128kb, and 64kb, respectively. All devices operate at a voltage range between 3.0 and 3.6V, and provide an endurance of 10 billion write/read cycles as well as data retention of 10 years at 55°C.

Operating frequency was increased to 25MHz max. Since FRAM products render voltage boosters unnecessary for the writing process, they’re well-suited for low-power applications.

The MB85RSxx devices come in 8-pin plastic SOP packages with standard memory pin assignment, which are fully compatible with EEPROM devices.

Fujitsu
http://emea.fujitsu.com/fram

About the Author

Sally Ward-Foxton

Sally Ward-Foxton is Associate Editor of Electronic Design Europe. Her beat covers all areas of the European electronics industry, but she has a particular interest in wireless communications and displays technology. She was previously Features Editor of Components in Electronics magazine and has also worked as a PR Account Director. Based in London, Sally holds a Masters' Degree in Electrical and Electronic Engineering from the University of Cambridge, UK.