Digital ICs/DSPs: Fast-Cycle DRAM Targets Mobile Systems And Draws 10 µA Asleep

Dec. 8, 2004

Mobile-phone applications can now dial up a 128-Mbit Mobile Fast Cycle RAM (FCRAM), because samples are now available. The memory chip implements burst-mode operations, complying with Common Specifications for Mobile RAM (COSMORAM) Revision 3. Both the MB82DBS04314C and the MB82DBS08164C achieve maximum burst-operation frequencies of up to 108 MHz with a single 1.8-V supply. User-configurable power-down modes dramatically cut the maximum standby current of 300µA to as little as 10µA. In addition, the MB82DBS04314C 128-Mbit pseudostatic RAM adopts a 32-bit address/data multiplexed bus. It more than doubles the data-transfer rate compared with existing products with 16-bit buses (including the MB82DBS0814C). Samples are available in packaged and in chip or wafer form. Pricing begins at $14.00 each in 10,000-unit quantities.

Fujitsu Microelectronics America Inc.
www.us.fujitsu.com/micro

About the Author

Dave Bursky

Technologist

Dave Bursky, the founder of New Ideas in Communications, a publication website featuring the blog column Chipnastics – the Art and Science of Chip Design. He is also president of PRN Engineering, a technical writing and market consulting company. Prior to these organizations, he spent about a dozen years as a contributing editor to Chip Design magazine. Concurrent with Chip Design, he was also the technical editorial manager at Maxim Integrated Products, and prior to Maxim, Dave spent over 35 years working as an engineer for the U.S. Army Electronics Command and an editor with Electronic Design Magazine.