Digital ICs/DSP: 128-Mbit CellularRAM Consumes Little Power, Delivers Burst Data

Oct. 4, 2004
Samples of the MT45W8MW16BGX 128-Mbit burst CellularRAM are now available. Organized as 8 Mwords by 16 bits, it incorporates the version 1.5 feature set as defined by the CellularRAM working group. It's also one of the first 128-Mbit burst...

Samples of the MT45W8MW16BGX 128-Mbit burst CellularRAM are now available. Organized as 8 Mwords by 16 bits, it incorporates the version 1.5 feature set as defined by the CellularRAM working group. It's also one of the first 128-Mbit burst pseudostatic RAMs (PSRAMs) available. Active current is 30 mA, and self-refresh current during standby is 200 µA. The PSRAM also performs Reads and Writes in 4-, 8-, 16-, 32-word, or continuous bursts. It offers increased compatibility with flash burst protocol and burst clock rates of 104/80/66 MHz. A variable latency function minimizes delays and maximizes bandwidth. In quantities of 1000 units, the 128-Mbit CellularRAM costs $9 each.

Micron Technology Inc.www.micron.com/products/psram/cellularram
About the Author

Dave Bursky | Technologist

Dave Bursky, the founder of New Ideas in Communications, a publication website featuring the blog column Chipnastics – the Art and Science of Chip Design. He is also president of PRN Engineering, a technical writing and market consulting company. Prior to these organizations, he spent about a dozen years as a contributing editor to Chip Design magazine. Concurrent with Chip Design, he was also the technical editorial manager at Maxim Integrated Products, and prior to Maxim, Dave spent over 35 years working as an engineer for the U.S. Army Electronics Command and an editor with Electronic Design Magazine.

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