4-Mbit Device Is First Commercially Available MRAM

July 20, 2006
Freescale Semiconductor’s Magnetoresistive RAM has 35-ns read and write cycle time.

The first commercially available Magnetoresistive Random Access Memory (MRAM) is a 4-Mbit device appropriate for applications such as networking, security, data storage, gaming, and printers. MRAM technology enables a fast, non-volatile memory with virtually unlimited endurance, offering the ease of use and performance of SRAM combined with the non-volatility of flash, according to its manufacturer, Freescale Semiconductor. As such, the MR2A16A is a reliable and economical replacement for battery-backed SRAM, the company says.

The 3.3-V device has a commercial temperature range and comes in a 400-mil, 44-lead plastic small-outline TSOP type-II RoHS-compliant package. It uses an industry-standard SRAM pinout. The MR2A16A is organized as 256 kwords by 16 bits. It features a 35-ns read and write cycle time. The asynchronous memory—equipped with chip enable, write enable, output enable, and separate upper and lower byte enable pins—allows for system design flexibility without bus contention. Other possible applications include cache buffer and configuration storage technologies, which can leverage the speed and non-volatility of MRAM to increase flexibility and boost performance.

The MR2A16A MRAM is available now from Freescale and selected distributors. PRICING
In small volumes, the MR2A16A costs $25.00. FOR MORE INFORMATION
Visit Visit www.freescale.com


To join the conversation, and become an exclusive member of Electronic Design, create an account today!