Fast Dual-Port SRAM Ready For Space

March 1, 1999
Capable of withstanding total radiation dose exposure of up to 1M rads(Si) and immune to charge particle-induced latchup, these dual-port SRAMs are especially at home in high-speed asynchronous data buffering applications such as are found in

Capable of withstanding total radiation dose exposure of up to 1M rads(Si) and immune to charge particle-induced latchup, these dual-port SRAMs are especially at home in high-speed asynchronous data buffering applications such as are found in space-borne electronic systems. Radiation-hardened UT7C138 (4Kx8) and UT7C139 (4Kx9) dual-port SRAMs have an address access time of just 45 ns, reportedly the world's fastest.The devices offer system designers high-performance memory for multi-processor, inter-processor and communication systems. And their on-board arbitration logic, with a system busy indicator, is said to greatly simplify system design.

Company: UTMC MICROELECTRONIC SYSTEMS INC.

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