Transistor And Schottky Diode Combos Housed In Tiny Space-Saving Package

Dec. 1, 2002
A micro-leaded package measuring just 3 x 2 x 0.9 mm high serves as the housing for six new devices that combine a MOSFET and Schottky diode or bipolar transistor and Schottky diode. The devices are said to require 88% less board space than comparable

A micro-leaded package measuring just 3 x 2 x 0.9 mm high serves as the housing for six new devices that combine a MOSFET and Schottky diode or bipolar transistor and Schottky diode. The devices are said to require 88% less board space than comparable SM8 packaged devices. Four of the devices pair either a NPN or PNP bipolar transistor with a 1A, 40V Schottky barrier diode. The transistors’s typical on-state voltage is 140 mV at 1A. Voltage ratings for PNP devices include 12V, 20V and 40V and the NPN device is rated for 40V. The other two devices are MOSFET/Schottky combinations based on N- and P-channel circuitry rated for 30V. Pricing is $0.29 each/1,000 with delivery time of four to six weeks. For more details, call Neil Chadderton at ZETEX INC., Hauppauge, NY. (631) 360-2222.

Company: ZETEX INC.

Product URL: Click here for more information

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