Well-suited for precise positioning and alignment applications, Model OD-20 array, high-power GaAlAs IR emitter features an emission spec of 880 nm, a 4-mW output at 100 mA per element, and typical power output uniformity element-to-element of ±10%. Standard DIPs permit elements to be more tightly spaced than discrete diodes, and tight tolerance on die placement is said to provide greater system accuracy than discrete diode assemblies.
Company: OPTO DIODE CORP. - Marketing Department
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