Image

NIR LED Array Enters High-Power Arena

July 22, 2010
The OD-850-30-030 30-die, near-infrared (NIR) LED array promises highly efficient operation and higher power with a narrow beam angle of 30?.

Embarking as the first in a series of high power LED arrays, the OD-850-30-030 30-die, near-infrared (NIR) LED array promises highly efficient operation and higher power with a narrow beam angle of 30°. The device specifies a peak wavelength of 850 nm (840-nm minimum and 865-nm maximum) and a total optical power output of 16W. Suitable for night-vision and skin-therapy apps, operating temperature is from -20°C to +100°C. Maximum junction temperature is +125°C with a junction-to-case thermal resistance of 0.8°C/W. OPTO DIODE CORP., Newbury Park, CA. (805) 499-0335.

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!