Low On-Resistance Power MOSFETs Characterized Down To 1.2 V Gate-To-Source

Sept. 17, 2007

Power-bus voltages keep going down with each process technology shrink, and that creates a switching and control problem. In most of today's low-voltage (1.5-V) MOSFETs, on-resistance tends to increase exponentially at lower gate-to-source voltages.

Don Tuite

Characterized for 1.2-V gate drives, Vishay's TrenchFETs offer guaranteed n-channel R_DS(ON) as low as 0.041 Ω and p-channel R_DS(ON) as low as 0.095 Ω. As a side benefit, on-resistance at a 1.5-V gate drive is better than in devices for which 1.5 V is the lowest V_GS: as low as 0.022 (n-channel) and 0.058 (p-channel).

These power MOSFETs (and their package types) include the n-channel SiA414DJ (PowerPAK SC-70), Si8424DB (Micro Foot), and SiB414DK (PowerPAK SC-75), and the p-channel SiA417DJ (PowerPAK SC-70), Si8429DB (Micro Foot), and SiB417DK (PowerPAK SC-75). Vishay previously released one 1.2-V p-channel MOSFET, the Si1499DH, in an SC-70 package.

Samples and production quantities of all seven 1.2-V devices are available now. Pricing for U.S. delivery starts at $0.15 each in 100,000-piece quantities.

Vishay Intertechnology

www.vishay.com

About the Author

Don Tuite

Don Tuite writes about Analog and Power issues for Electronic Design’s magazine and website. He has a BSEE and an M.S in Technical Communication, and has worked for companies in aerospace, broadcasting, test equipment, semiconductors, publishing, and media relations, focusing on developing insights that link technology, business, and communications. Don is also a ham radio operator (NR7X), private pilot, and motorcycle rider, and he’s not half bad on the 5-string banjo.