Superjunction 600-V MOSFETs Optimized for AI and Telecom Servers
WeEn Semiconductors’ WSJ2M60R065DTL, a 600-V superjunction MOSFET, was developed specifically for computing and telecom server applications. It combines high operating voltage, efficient operating characteristics, and an advanced thermal design to address the demands of artificial intelligence (AI) and other high-performance processing applications.
Based on the company’s latest generation superjunction technology, the MOSFET combines an industry-leading on-resistance (RDS(on)) and figure of merit (RDS(on) × Qg) with an ultra-compact TOLL package. It’s rated for 50 A, features a maximum RDS(on) of 65 mΩ, and maintains a typical blocking voltage of around 700 V.
The MOSFET also has an integrated and fine-tuned forward recovery diode (FRD), which ensures excellent reverse-recovery robustness and balanced high-temperature performance. The body diode can withstand a commutation speed of 1000 A/μs without damage. This makes it particularly suitable for zero-voltage-switching (ZVS) applications in soft-switching topologies, where it can deliver high efficiency while handling irregular operating conditions.
At the same time, stable resistance performance delivers a steady and predictable RDS(on) across a range of current and temperature conditions.
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