Advanced 1,600-V IGBTs Aimed at Energy-Conscious Appliance Markets
The STGWA30IH160DF2 IGBT developed by STMicroelectronics combines a breakdown-voltage rating of 1,600 V and high thermal performance with efficiency in soft-switching topologies, plus easy paralleling in high-power applications.
The IGBT, featuring a maximum junction temperature of 175°C and low thermal resistance to ensure efficient dissipation, has a current rating of 30 A. It offers long-term reliability in challenging environments while enabling a lower bill of materials (BOM). Thus, its especially suited for cost-conscious applications, including induction heaters and cookers, microwave ovens, and rice cookers.
Leveraging advanced trench-gate field-stop (TGFS) technology, the 1,600-V IGBT in ST’s new IH2-generation combines high breakdown-voltage capability with low saturation voltage (VCE(sat)) to minimize conduction losses. As a result, the STGWA30IH160DF2 has a VCE(sat) of just 1.77 V (typical), thus minimizing tail current that results in low turn-off energy.
In addition, the device’s anti-parallel diode has a low forward voltage and soft recovery that enhance efficiency in resonant and soft-switching topologies. These characteristics allow the STGWA30IH160DF2 to be used in single-switch quasi-resonant converters over a wide switching frequency range of 16 to 60 kHz. The high breakdown voltage and thermal efficiency let the device withstand large voltage surges and spikes while minimizing reliance on external protective components.
Home appliances built with these IGBTs can compete strongly in price-sensitive markets thanks to BOM savings, while the high efficiency lets new designs achieve high energy ratings. The STGWA30IH160DF2, in production now, is available in a TO-247 long lead package from $1.98 for orders of 1,000 pieces.
