Mini MOSFET with Ultra-Low On-Resistance Targets Fast-Charging Apps
ROHM Semiconductor’s AW2K21 consists of a pair of 30-V N-channel power MOSFETs, configured in a common-source configuration that delivers an on-resistance of just 2.0 mΩ (typ.) in a compact 2.0- × 2.0-mm package. Able to deliver up to 20 A at between 28 and 30 V, its low losses and compact form factor address the requirements of products such as smartphones and other smaller devices with large-capacity batteries that need fast charging times and bidirectional protection.
The device is a space-saving alternative to conventional solutions that typically use two discrete, large, low on-resistance MOSFETs. The AW2K21’s two MOSFETs are integrated in a single package using a proprietary structure that enhances cell density while minimizing the on-resistance per unit chip area.
Unlike standard vertical trench MOS structures, the proprietary structure places the drain terminal on the top surface, which enables the use of a WLCSP package. In power supply and charging circuits for compact devices, the integrated dual MOSFET can reduce the solution footprint and on-resistance per unit area up to 81% and 33%, respectively. ROHM also claims that, even compared to similarly sized GaN HEMTs, on-resistance is decreased by up to 50%.
On top of that, the AW2K21 is suitable for use as a unidirectional protection MOSFET in load switch applications. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2- × 1.2-mm model. Datasheets and application information are available here.
