Space-Rated MOSFET Family Adds First Rad-Tolerant P-Channel Device
P-channel power MOSFETs are now part of Infineon Technologies’ mix of radiation-tolerant MOSFETs for low-Earth-orbit (LEO) systems. Included in the company’s expanding portfolio of devices for “NewSpace” applications, the new 60-V P-channel MOSFET provides a cost-optimized, radiation-tolerant solution for designs using smaller and lighter-weight components with radiation performance suitable for missions lasting two to five years.
The P-channel MOSFET complements the already available 60- and 150-V N-channel devices, all offered in plastic packaging, which is lower in cost than the traditional hermetic packaging used in rad-hardened devices. It can also be produced in higher volumes using standard manufacturing practices.
The rad-tolerant discretes, space-qualified to the requirements of the AEC-Q101 standard, are rated for single event effects (SEE) at 46 MeV∙cm2/mg linear energy transfer (LET) and a total ionizing dose (TID) of 30 to 50 krad (Si).