Gen 4 SiC Tech Further Elevates High-Power Performance
Engineered for high-power electronics applications, Wolfspeed’s fourth-generation silicon-carbide (SiC) MOSFET technology builds on the company’s third-gen SiC MOSFETs, optimizing conduction losses, switching behavior, ruggedness, and reliability. Gen 4 MOSFETs help simplify system design and usability without compromising ruggedness and durability.
Targeting high-power automotive, industrial, and renewable-energy applications, these MOSFETs have a long-term road map that includes application-optimized bare die, module, and discrete products.
Gen 4 MOSFETs minimize conduction losses to improve efficiency across the load spectrum for things like extended electric-vehicle range, better energy ratings for HVAC systems, and lower cooling costs in server farms due to reduced thermal-management needs.
Cutting down on switching losses is also important, especially in applications that operate at varying loads, as an increased switching frequency enables smaller, lighter, and more cost-effective magnetics and capacitors. They can also prioritize efficiency gains by reducing heat dissipation, lowering system-level costs through smaller heatsinks or minimized cooling needs.
