Northrop Grumman demonstrates 40-W single-chip Ka-band amplifier

May 21, 2015
2 min read

Northrop Grumman Corp. has demonstrated the highest power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier ever produced for the Ka-band. With a peak power of 40 W at 27 GHz, the 27- to 30-GHz amplifier has an average output power of 36 W and a power added efficiency (PAE) of greater than 30% across the band. The MMIC area is a compact 13.5 mm2 and establishes a new standard of performance achieved by a single MMIC.

This new 40-W circuit was manufactured using the same process that is being matured through the company’s participation in the Air Force Research Laboratory Gallium Nitride Advanced Electronic Warfare Monolithic Microwave Integrated Circuit Producibility program, an initiative funded under Title III of the Defense Procurement Act. The program seeks to establish a domestic, economically viable, open-foundry merchant supplier production capability for Ka-band GaN MMICs.

“This is a big breakthrough for the industry because it will help lead the way to the widespread commercial availability of cost effective Ka-band GaN components with output powers exceeding 25 W,” said Frank Kropschot, general manager, Microelectronics Products and Services, Northrop Grumman. “The commercial availability of high frequency, high power components will greatly reduce the cost and number of parts needed for communications equipment, making higher data rates and longer distance communication links more easily obtainable.”

Northrop Grumman’s paper on this achievement, entitled “High Power and High Efficiency Ka-band Power Amplifier,” was presented at IMS 2015 on Wednesday.

“Designing this circuit was challenging because we aimed for a very small footprint for the amplifier and still had to give consideration to thermal concerns,” said Mansoor Siddiqui, a co-author of the paper along with Mike Wojtowicz “We managed to minimize output loss while achieving a good 18-dB load match in a small area. The PAE we have attained establishes a high mark while delivering 35-40 watts at Ka-band.”

More information and advance data sheets on Northrop Grumman’s gallium nitride product line are available online at www.as.northropgrumman.com\mps. Limited engineering samples of most products are available from stock to qualified customers.

Northrop Grumman is a pioneer in the design and fabrication of high-speed components for established and emerging commercial markets, including cellular and broadband wireless systems as well as aerospace, defense, and scientific applications. The company also offers foundry services that utilize advanced gallium nitride, gallium arsenide, and indium phosphide semiconductor manufacturing processes.

www.northropgrumman.com

About the Author

Rick Nelson

Rick Nelson

Contributing Editor

Rick is currently Contributing Technical Editor. He was Executive Editor for EE in 2011-2018. Previously he served on several publications, including EDN and Vision Systems Design, and has received awards for signed editorials from the American Society of Business Publication Editors. He began as a design engineer at General Electric and Litton Industries and earned a BSEE degree from Penn State.

Sign up for our eNewsletters
Get the latest news and updates

Voice Your Opinion!

To join the conversation, and become an exclusive member of Electronic Design, create an account today!