ECT introduces ZIP probe for high-end digital devices

Aug. 27, 2015

Fontana, CA. Everett Charles Technologies (ECT) launched a new member of the versatile ZIP semiconductor test probe family. The Z-080YHJ is designed to meet the challenges associated with testing high-end digital (HED) devices.

Tony DeRosa, senior product manager said, “High-lead count packages require a large compression window to compensate for package co-planarity stack-up errors. In addition, these devices often require a high level of signal integrity which is typically in the 12-GHz+ range. These requirements result in conflicting physical parameters. A large compression window increases the length of the probe while high bandwidth drives probe length to as short as possible.”

The Z-080YHJ’s 5.0-mm test height provides a total compression window of 0.8-mm. The probe also provides an insertion loss of 18 GHz at -1 dB (GSG). These factors combined make the Z-080YHJ suitable for HED applications. The Z-080YHJ is scaled for 0.8-mm and greater device pitches and targets high-lead-count BGAs and LGAs. The DUT-side plunger is made from ECT’s durable HyperCore homogenous alloy. This along with its sharp dual-tip geometry allows penetration of solder ball oxides with less force than standard 4-point crown tips.

ZIP probes are based on ECT’s patented flat probe technology. The manufacturing process used to fabricate ZIP probes is repeatable and results in a high level of consistency from probe lot to lot. Other ZIP probes target RF, mixed-signal, and general-purpose semiconductor test applications. Markets served include burn-in, lab testing, and high volume production.

http://ect-cpg.com/semiconductor-probes

About the Author

Rick Nelson | Contributing Editor

Rick is currently Contributing Technical Editor. He was Executive Editor for EE in 2011-2018. Previously he served on several publications, including EDN and Vision Systems Design, and has received awards for signed editorials from the American Society of Business Publication Editors. He began as a design engineer at General Electric and Litton Industries and earned a BSEE degree from Penn State.

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