Grenoble, France. CEA-Leti today announced that it has joined the GLOBALSOLUTIONS ecosystem as an ASIC provider, specifically to support GLOBALFOUNDRIES’ 22FDX technology platform.
Launched this summer, GLOBALFOUNDRIES’ 22FDX technology platform is the industry’s first 22-nm FD-SOI semiconductor technology developed specifically to meet the ultra-low-power requirements of the next generation of connected devices. The versatility of the 22FDX platform is a result of unmatched design flexibility and intelligence, including software-controlled transistor body-biasing that provides real-time trade-offs between power and performance. Delivering FinFET-like performance and energy-efficiency at a cost comparable to 28-nm planar technologies, the platform enables a new level of innovations on next-generation chips and sets new standards in-terms of user experience for Internet of Things (IoT), mainstream mobile, RF, and networking applications.
GLOBALSOLUTIONS was created more than five years ago to spur innovation in the semiconductor industry and ensure chip designers receive world-class service from design conception to production. The ecosystem combines GLOBALSOLUTIONS’ internal resources with a broad spectrum of partners to efficiently enable the fastest time-to-volume for foundry customers.
“Together with our design services partners, we are able to offer a full suite of services and comprehensive turnkey solutions that confirms GLOBALFOUNDRIES’ leadership in providing high-performance customized products in the FD-SOI and ASIC markets,” said Gary Patton, chief technology officer and head of worldwide R&D at GLOBALFOUNDRIES. “Our expanded partnership with Leti further reflects our commitment to find design implementations that will accelerate time-to-volume and deliver ultra-low-power solutions to our customers.”
Earlier this year, Leti assigned a team of experts to GLOBALFOUNDRIES’ Dresden, Germany, Fab 1 to support ramp up of the platform. As an ecosystem partner, Leti will provide GLOBALFOUNDRIES’ customers circuit-design IP, including for its back-bias feature for FD-SOI, which enables exceptional performance at very low voltages with low leakage.
“This strategic partnership with GLOBALFOUNDRIES positions Leti to help a broad range of designers utilize FD-SOI technology’s significant strengths in ultra-low-power and high performance in their IoT and mobile devices with 22-nm technology,” said Marie Semeria, Leti CEO. “In addition, it gives both sides’ customers increased access to our respective technologies. This kind of partnership is a key part of Leti’s global strategy.”
