60 G Hz Product Table

Peregrine announces production quantities of 60-GHz RF SOI switches

Jan. 23, 2017

San Diego, CA. Peregrine Semiconductor has announced the immediate availability of volume production quantities of its UltraCMOS 60-GHz RF SOI switches. The PE42525 and PE426525 extend Peregrine’s high-frequency portfolio into frequencies previously dominated by GaAs technology.

Both 60 GHz switches have a fast switching speed of only 8 ns. The PE42525 is suitable for test-and-measurement equipment, microwave-backhaul solutions, and higher frequency switching in 5G systems. The PE426525 boasts an extended temperature range, making it suitable for harsh-environment applications in industrial markets.

“When we announced availability of 60-GHz switch samples and evaluation kits in early October at European Microwave Week, the response was tremendous,” said Kinana Hussain, director of marketing at Peregrine Semiconductor. “These high frequency switches are garnering a high adoption rate in multiple markets including 5G, test and measurement (T&M), and defense. Not only do these switches break paradigms in high frequency, they also break paradigms in SOI fast switching.”

The PE42525 and PE426525 join Peregrine’s high-frequency product portfolio, which includes multiple switches, an image-reject mixer, and monolithic phase and amplitude controllers (MPACs). Peregrine’s proprietary UltraCMOS technology platform enables these products to reach high frequencies without compromising performance or reliability.

Supporting a frequency range from 9 kHz to 60 GHz, the PE42525 and PE426525 are single-pole double-throw (SPDT) RF switches. The two reflective switches deliver a fast switching speed of 8 ns and RF TRISE/TFALL time of 3 ns. Both switches have low current of 390 nA. They deliver high port-to-port isolation, low insertion loss, high power handling, high linearity, and ESD protection of 1 kV HBM. At 50 GHz, the PE42525 and PE426525 exhibit port-to-port isolation of 37 dB and insertion loss of 1.9 dB. The PE426525 also has an extended temperature range from -55 to +125°C.

The PE42525 and PE426525 are available as a flip-chip die with 500-micron bump pitch—the best form factor for high-frequency performance as it eliminates performance variations due to wire-bond length. Production parts and evaluation kits are available now. For 1k-quantity orders, the PE42525 die is $40 each, and the PE426525 is $48 each.

http://www.psemi.com/products/rf-switches/pe42525

http://www.psemi.com/products/rf-switches/pe426525

About the Author

Rick Nelson | Contributing Editor

Rick is currently Contributing Technical Editor. He was Executive Editor for EE in 2011-2018. Previously he served on several publications, including EDN and Vision Systems Design, and has received awards for signed editorials from the American Society of Business Publication Editors. He began as a design engineer at General Electric and Litton Industries and earned a BSEE degree from Penn State.

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