Richardson RFPD offers NXP MRFX high-power RF transistor

Geneva, IL. Richardson RFPD Inc. has announced the availability of and full design support capabilities for a new 65-V, wideband RF power LDMOS transistor from NXP Semiconductors. The MRFX1K80H is the first product in NXP’s new MRFX series. It is designed to deliver 1,800 W CW at 65 V for applications from 1.8 to 400 MHz and is capable of handling a VSWR of 65:1.

Available in an air-cavity ceramic package, it is a rugged transistor designed for use in high-VSWR ISM applications, as well as radio and VHF TV broadcast, sub-GHz aerospace, and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.

Additional key features of the MRFX1K80H include a high breakdown voltage for enhanced reliability. The device can be used single-ended or in a push-pull configuration, and it is qualified up to a maximum of 65-V_DD operation. It is suitable for linear application with appropriate biasing, and it includes integrated ESD protection with greater negative gate-source voltage range for improved Class C operation. It is also included in NXP product longevity program with assured supply for a minimum of 15 years after launch.

For more information, visit the MRFX1K80H webpage.