Wolfspeed to amplify its GaN RF technology and GaN-on-SiC foundry services at CSICS
Wolfspeed announced it would be highlighting its RF amplifier technology as well as showcasing its GaN-on-SiC commercial foundry services, enabling RF design engineers to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.
Wolfspeed said it would be exhibiting at the 2017 IEEE Compound Semiconductor IC Symposium (CSICS), an international forum for advancing the technologies involved in compound semiconductor integrated circuits, encompassing GaAs, InP, GaN, SiGe, and nanoscale CMOS technology, scheduled for October 22-25 in Miami, FL. Wolfspeed engineers will be showcasing the company’s reliable commercial open GaN-on-SiC foundry services as well as demonstrating their latest GaN-on-SiC power devices for an extensive range of RF power-amplifier applications for military communications systems, radar equipment, electronic warfare and electronic countermeasure systems, and commercial RF applications in the industrial, medical, and scientific (ISM) band. Wolfspeed’s GaN RF technology offers a FIT rate of <10 after billions of device hours of field operation.
“As GaN-on-SiC RF technology has entered the mainstream in commercial wireless infrastructure, our industry-leading open RF foundry and components business continues to innovate to meet the changing cost, efficiency, and performance demands needed for upcoming 5G systems,” said Jim Milligan, vice president, RF and microwave products. “As a leader in commercializing GaN-on-SiC technology for RF applications, we are proud to contribute to the IEEE CSICS Symposium as the conference continues to be at the forefront of innovation in compound semiconductors.”
Wolfspeed’s RF business development manager Simon Wood serves as the exhibition chair of the CSICS conference, and Wolfspeed personnel will present one of the CSICS 2017 conference technical sessions. On Wednesday, October 25, at 1:30 p.m., Wolfspeed RF applications engineer Kasyap Patel will deliver a presentation entitled “Current Contours-Based Input Matching Network (IMN) Design Methodology for Broadband GaN Doherty Power Amplifiers.” Co-presenters for this session are H. Golestaneh, RF/mmWave design engineer at Peraso Technologies, and S. Boumaiza, Professor, ECE at University of Waterloo, Canada.