Richardson RFPD offers NXP 750-W CW RF transistor

Jan. 19, 2018

Geneva, IL. Richardson RFPD Inc. has announced the availability of and full design support capabilities for a new RF power LDMOS transistor from NXP Semiconductors. The MRF13750H/MRF13750HS, available in bolt-down and solder-down styles, is a 750-W continuous-wave transistor designed for industrial, scientific, and medical (ISM) applications in the 700- to 1,300-MHz frequency range. It is capable of CW or pulse power in narrowband operations.

The new transistor is internally input-matched, can be used single-ended or in a push-pull configuration, and is characterized for 30 to 50 V. It is suitable for linear applications with appropriate biasing and includes integrated ESD protection.

The MRF13750H/HS offers ease-of-use to microwave generator designers, delivering precision, control, and reliability not available with vacuum-tube-era technologies such as magnetrons. It supports accurate power control over the full dynamic range from 0 to 750 W, enabling frequency shifting that helps make precise use of RF energy.

Typical ISM applications for the MRF13750H/HS include 915-MHz industrial heating and welding systems and 1,300-MHz particle accelerators.

An associated test fixture tuned to 915 MHz is available.

Additional key features of the MRF13750H / MRF13750HS include:

  • 750-W CW operation at 915 MHz with 63% efficiency,
  • 700-W CW operation at 1,300 MHz with 70% efficiency,
  • NI-1230 air-cavity ceramic package,
  • 15°C/W thermal resistance,
  • high ruggedness (handles 10:1 VSWR),
  • internally input matched, and
  • included in NXP’s 15-year longevity program.

To find more information, visit the MRF13750H/MRF13750HS webpages.

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