San Antonio, TX. Littelfuse Inc. and Monolith Semiconductor Inc. announced at APEC two 1,200-V silicon-carbide (SiC) n-channel, enhancement-mode MOSFETs to their expanding first-generation portfolio of power semiconductor devices. These new SiC MOSFETs are the latest products of a strategic partnership that Littelfuse formed with Monolith in 2015 to develop power semiconductors for industrial and automotive markets. The announcement was made in the Littelfuse booth at APEC 2018.
The LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs offer ultralow on-resistance (RDS(ON)) levels of just 120 mΩ and 160 mΩ, respectively. These SiC MOSFETs are designed for use as power semiconductor switches in a range of power-conversion systems, outperforming their silicon MOSFET counterparts substantially in terms of blocking voltage, specific on-resistance, and junction capacitances. They also offer a combination of high operating voltages and ultrafast switching that traditional power transistor solutions such as silicon IGBTs with similar current ratings and packages can’t match.
Typical applications for these new SiC MOSFETs include electric vehicles, industrial machinery, renewable energy (for example, solar inverters), medical equipment, switch-mode power supplies, uninterruptible power supplies (UPSs), motor drives, high-voltage DC/DC converters, and induction heating.
“These new SiC MOSFETs provide power-converter designers with a state-of-the-art alternative to traditional silicon-based transistors,” said Michael Ketterer, product marketing manager for power semiconductors at Littelfuse. “Their inherent material characteristics and ultrafast switching capabilities offer a variety of design optimization opportunities including increased power density, higher efficiency, and the potential for lower bill-of-material costs.”
The new 1,-200V SiC MOSFETs offer these key benefits:
- A reduction in passive-filter components at the system level supports increased power density, for a design that’s optimized for use in high-frequency, high-efficiency applications.
- Extremely low gate charge and output capacitance combined with ultralow on-resistance allows for minimal power dissipation, higher efficiency, and a reduction in the size and sophistication of the cooling techniques required.
LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450. Sample requests may be placed through authorized Littelfuse distributors worldwide.