Sumitomo Electric to feature S-band and X-band GaN products for radar at IMS
Sumitomo Electric Industries Ltd. and its group company Sumitomo Electric Device Innovations USA Inc. (SEDU) announced they will participate in IMS 2018 June 10-15 in Philadelphia. SEDU is a provider of advanced RF, wireless, and optical communications solutions. Its latest offerings include S-band and X-band GaN HEMTs targeted for radar applications at 3.1 to 3.5 GHz and 9.0 to 10 GHz, respectively.
Today’s radars provide large detection areas and advanced early detection, while reducing their size and weight, SEDU said. GaN is a proven and reliable semiconductor material used for radar applications. Having high power output and wide bandwidth, GaN is expected to improve the performance of radars. Sumitomo Electric will showcase new GaN-HEMT products, the SGN3135-500H-R and SGC0910-300A-R, at the conference.
Features of SGN3135-500H-R for the S-band include
- high output power, PSAT = 570 W (typ.);
- high gain, GP = 11.6 dB (typ.);
- high power-added efficiency, 58% (typ.);
- 1- to 3.5-GHz frequency band;
- 50-Ω impedance-matched ZIN/ZOUT; and
- a hermetically-sealed package.
Features of SGC0910-300A-R for the X-band include
- high output ower, PSAT = 340 W (typ.);
- high gain, GP = 9.3 dB (typ.);
- high power-added efficiency, 35% (typ.);
- 0- to 10.0-GHz frequency band:
- 50-Ω impedance-matched ZIN/ZOUT; and
- a hermetically sealed package.
The SGN3135-500H-R and SGC0910-300A-R were designed by drawing on Sumitomo Electric’s established GaN process technology.