FAQ: How to Use the Wolfspeed SpeedFit™ Design Tool for Your Next Power Electronic Design

Feb. 26, 2024
Silicon Carbide design simulation tools are great for design engineers to use to help accelerate time-to-market. In this FAQ, readers will explore the in-circuit behavior of silicon carbide (SiC) MOSFETs and Schottky diodes used in power topologies. We’ll cover conduction and switching losses, gate resistance, and thermal configurations pertaining to the devices.

Design simulators have long been key to new circuit designs, particularly for power electronics. The latest design simulation platforms focus on silicon carbide (SiC) MOSFETs and Schottky diodes that are typically used in power topologies such as buck and boost converters. Design simulation tools help design engineers decrease time-to-market by allowing them to thoroughly test components before designing them. 

This FAQ explains how engineers can evaluate three different forms of conduction losses, including forward, reverse, and body-diode losses. Designers will learn how design simulations on SiC chips are performed using a PLECS-based simulation platform geared specifically toward user-specified data. 

In discussion is the Wolfspeed SpeedFit™ simulation tool that operates through a differential equation solver and lumped element models in each respective domain that is tested. Prior to system calculations and simulation, designers will be asked to go through five simple steps that are detailed in this FAQ. For additional help and/or instruction, this paper guides users to SiC design simulator user guide links as well as the company’s Power Applications Forum. 

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