EE Product News

Chipscale Power MOSFET Minimizes On-Resistance

A chipscale P-channel power MOSFET, the Si8413DB combines very low on-resistance and small size in a single device. On-resistance is specified at 48 m? at a gate drive of 4.8V, and a maximum of 63 m? at 2.5V gate drive. The device comes in a chipscale package that measures 1.54 mm x 1.54 mm by 0.62 mm high. It offers comparable performance to MOSFETs in the TSOP-6 package while occupying a quarter of the space. A solder-bump process and other packaging techniques eliminate the need for an outer package to encase the MOSFET die, reducing total package size. Breakdown voltage is rated at -20V. Typical applications are in portable electronics products such as cell phones, pagers, PDAs, and other handheld systems. Pricing is $0.25 each/100,000. VISHAY INTERTECHNOLOGY INC., Santa Clara, CA. (619) 336-0860.


Product URL: Click here for more information

Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.