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Power MOSFETs Carve Down On-Resistance

Recent additions to the NP Series low-voltage power MOSFETs, the NP160N040TUG and NP160N04TDG, claim ultra-low on-state resistance benchmarks at 2 mΩ maximum. Employing a UMOS-4 fabrication process and advanced packaging, the devices reduce leakage current and efficiently manage heat dissipation. The UMOS-4 process in a trench configuration achieves a design rule of 0.25 microns and results in cell densities up to 160 million cells per square inch. The NP160N04TUG operates at a gate voltage of 10V and a drain voltage of 40V, while the NP160N04TDG operates at gate voltages of 5V and 10V and a drain voltage of 40V. Available now in RoHS-compliant packages, prices start at $1.85 each/1,000. NEC ELECTRONICS AMERICA INC., Santa Clara, CA. (800) 366-9782.


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