Electronic Design

1-W InGaP HBT Amp Boasts High Linearity For Mobile Infrastructure Apps

The AH212-EG amplifier from WJ Communications fits driver service in GSM, GPRS, CDMA, WCDMA, TD-SCDMA, and WiBro wireless technologies. It uses heterojunction bipolar (HBT) transistors made with indium gallium phosphide (InGaP). With two stages of amplification, it has 1-W output.

Also, the AH212-EG uses internal active bias, and its overall gain is 26 dB. Its operating frequency ranges from 1800 to 2400 MHz. At 2140 MHz, the third-order intercept is +46 dBm, the 1-dB compressed power is +29.5 dBm, and the noise figure is 6 dB. And, it operates from a 5-V supply and typical current drain of about 800 mA.

The lead-free, 4- by 5-mm, quad flat no-lead (QFN) package complies with the European Union’s Restrictions on Hazardous Substances. Its large mounting surface improves the thermal impedance to the circuit board for overall reliability and lower junction temperatures. It can operate from –40°C to 85°C and achieve a mean-time to failure of 1 million hours.

The AH212 is available in production quantities now. Samples and fully assembled 1960- and 2140-MHz evaluation boards are also available.

WJ Communications

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