Electronic Design

190-V N-Channel Power MOSFET Plus 190-V Diode Offers 1.8-V VGS On Resistance

The SiA850DJ from Vishay Intertechnology is the first 190-V n-channel power MOSFET plus co-packaged 190-V power diode to offer an on-resistance rating of 1.8 V VGS, according to the company. Offered in the Siliconix PowerPAK SC-70 package, it has a compact 2- by 2-mm footprint and an ultra-thin 0.75-mm profile.

Typical applications include dc-dc converters for high-voltage piezoelectric motors and organic LED backlighting in portable devices such as PDAs, MP3 players, and smart phones. Integrating the MOSFET and the power diode into the same package saves at least a third of the printed-circuit board area while lowering solution costs by eliminating the need for an external diode, Vishay says.

While larger devices feature on-resistance ratings down to 2.5 V, the SiA850DJ is rated down to 1.8 V, which further saves board space by reducing the need for level shift circuitry. The device offers low on-resistance values from 17 Ω at 1.8-V VGS to 3.8 V at 4.5-V VGS, as well as a diode forward voltage of 1.2 V at 0.5 A.

The 100% lead-free and halogen-free SiA850DJ complies with the European Union’s Restrictions on Hazardous Substances (RoHS) and meets the demands of international legislation for the elimination f hazardous substances. Samples and production quantities are available now, with lead times of 10 to 12 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.17.

Vishay Intertechnology


Related Articles

Gen III Power MOSFETs Raze On Resistance

Switch-Mode ICs Promote Efficient Power Management, Part 2: DC-DC Controllers And Converters

Power-MOSFET Gate Drivers

Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.