EE Product News

Low-Noise Amplifier Employs SiGe:C Technology

This new low-noise amplifer (LNA) with an on-chip bypass switch utilizes the SiGe:C module of the companyÕs advanced 0.35 micron RF BiCMOS process. And, in fact, the MBC13720 LNA is the companyÕs first SiGe:C standard product for the merchant market. Designed for 400 MHz to 2.4 GHz multi-standard wireless applications, the MBC13720 is said to have high gain, high input IP3 (third-order intercept point), a low noise figure, selectable current settings, and a standby mode to turn the device completely off. Input and output matching is performed externally for maximum design flexibility.The on-chip bypass switch improves the deviceÕs dynamic range with low insertion loss for receiver designs. It also helps to conserve board space and reduce system and manufacturing costs, the company says. Specifications for the device include: high input IP3 of 10 dBm at 1.9 GHz and 13 dBm at 2.4 GHz; noise figure of 1.38 dB at 1.9 GHz and 1.55 dB at 2.4 GHz; and gain (at 9.0 mA, 2.75V) of 14.5 dB at 1.9 GHz and 12 dB at 2.4 GHz.Applications include PCS 1,900 MHz cellular telephones and 900 and 2,400 MHz industrial, scientific and medical (ISM) band designs. Housed in an ultra-small SOT-363 surface-mount package and shipped in tape-and-reel packages, the MBC13720 is priced at $1.50 each/10,000. An evaluation board is available.


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