EE Product News

Silicon-Based Cap Boosts Electrical Performance

outed as an industry first, a new silicon-based RF capacitor has been designed to boost electrical performance while reducing board size by up to 45%. The HPC0402A capacitor is useful for circuitry in cell phones and other wireless communication systems. This silicon-based capacitor has the same range of capacitance values as conventional capacitors. It is said to have a wide frequency range, high Q factor, low ESR value, and highly accurate dimensions. Decreasing the distance between components with its construction, the HPC0402A reduces parasitic lines and improves circuit performance. The device’s bump structure eliminates the tombstone effect, providing a flat top area for better pick-and-place assembly. With accuracy greater than 22 pF, the HPC0402A comes in 6V, 10V, 16V, and 25V options. Capacitance ranges from 0.6 pF to 180 pF with tolerance to 0.05 pF. The HPC0402A measures 1.02 mm x 0.51 mm with a height of 0.40 mm. It has a temperature coefficient of capacitance of ±30 ppm/°C over a temperature range of –55°C to +125°C. At the maximum temperature, the capacitor has a lifetime of 1,000 hours at twice the rated power, and resistance to moisture and thermal shock. VISHAY INTERTECHNOLOGY INC., Malvern, PA. (610) 251-5287.


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