Targeted at automotive applications, the Vishay Siliconix SQJ940EP and SQJ942EP dual n-channel TrenchFET power MOSFETs feature asymmetric, 5- by 6-mm PowerPAK SO-8L packaging. The asymmetric package enables a larger low-side MOSFET for lower conduction losses. Vishay Intertechnology’s devices combine high- and low-side MOSFETs required for high-efficiency synchronous dc-dc buck converters. Operating temperature ranges to +175°C. The SQJ940EP, at the 10-V rating, offers maximum on-resistance of 6.4 mΩ for the Channel 2 low-side MOSFET and 16 mΩ for the Channel 1 high-side MOSFET. Maximum on-resistance for the SQJ942EP is 11 mΩ at 10 V and 22 mΩ for the low- and high-side MOSFETs, respectively. Both devices particularly suit vehicle telematics applications, such as radio and GPS systems.