650-V GaN HEMTs Add Current Sensing, Self-Protection
Cambridge GaN Devices launched its 650-V H1 series of gallium-nitride (GaN) HEMTs targeted at consumer electronic goods such as mobile chargers, power adapters for PCs, and other switched-mode power supplies (SMPS).
CGD said its unique ICeGaN technology taps into the advantages of cascode configurations with enhancement-mode (or normally-off) power transistors (HEMTs). The GaN devices also integrate smart current sensing and a wide range of self-protection features, and they can be “seamlessly” paired with gate drivers. All building blocks are placed on a single die that cuts power losses by 50% compared to legacy silicon devices.
“No additional components are needed to drive ICeGaN, no clamping diodes for protection, no negative voltages are needed to turn off the power transistor,” said Andrea Bricconi, VP of business development at CGD, in a statement. He added, “the highest performance levels are guaranteed by GaN intrinsic properties.”
CGD said the GaN devices have on-state resistances (RDS(on)) ranging from 55 to 200 mΩ, and they are available in DFN 5- × 6-mm and DFN 8- × 8-mm SMD packages for use in low- and mid-power SMPS designs.
CGD is preparing other GaN ICs and packaging solutions for the higher power levels required by data centers, telecom equipment, solar inverters and renewable-powered systems, and electric vehicles.
